d g s n-channel mosfet ' 7 6 g s d top view 2 3 to-236 (sot-23) 1 DTS4500 www.daysemi.jp document number: 67030 s10-2250-rev. a, 04-oct-10 www.daysemi.jp 1 new product n-channel 40 v (d-s) mosfet product summary v ds (v) r ds(on) ( ? ) i d (a) a q g (typ.) 40 0.042 at v gs = 10 v 5.6 2.9 nc 0.051 at v gs = 4.5 v 5.1 notes: a. based on t c = 25 c b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. maximum under steady stat e conditions is 125 c/w. absolute maximum ratings (t a = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) t c = 25 c i d 5.6 a a t c = 70 c 4.5 t a = 25 c 4.3 b, c t a = 70 c 3.5 b, c pulsed drain current i dm 20 continuous source-drain diode current t c = 25 c i s 1.75 t a = 25 c 1.04 b, c maximum power dissipation t c = 25 c p d 2.1 w t c = 70 c 1.3 t a = 25 c 1.25 b, c t a = 70 c 0.8 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) 260 thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b, d t ? 5 s r thja 80 100 c/w maximum junction-to-foot (drain) steady state r thjf 40 60 features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfet ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? dc/dc converters ? load switch ? portable and consumer applications
DTS4500 www.daysemi.jp www. daysemi.jp 2 document number: 67030 s10-2250-rev. a, 04-oct-10 new product notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 % b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 40 v v ds temperature coefficient ? v ds /t j i d = 250 a 39 mv/c v gs(th) temperature coefficient ? v gs(th) /t j - 4.7 gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.2 2.5 v gate-source leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a v ds = 40 v, v gs = 0 v, t j = 70 c 10 on-state drain current a i d(on) v ds ?? 5 v, v gs = 10 v 20 a drain-source on-state resistance a r ds(on) v gs ?? 10 v, i d = 4.3 a 0.035 0.042 ? v gs ?? 4.5 v, i d = 3.9 a 0.041 0.051 forward transconductance a g fs v ds = 20 v, i d = 4.3 a 17 s dynamic b input capacitance c iss v ds = 20 v, v gs = 0 v, f = 1 mhz 340 pf output capacitance c oss 60 reverse transfer capacitance c rss 30 total gate charge q g v ds = 20 v, v gs = 10 v, i d = 4.3 a 5.8 9 nc v ds = 20 v, v gs = 4.5 v, i d = 4.3 a 2.9 6 gate-source charge q gs 1.1 gate-drain charge q gd 0.9 gate resistance r g f = 1 mhz 0.6 3.3 6.6 ? tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 ? i d ? 3.5 a, v gen = 4.5 v, r g = 1 ? 12 20 ns rise time t r 50 75 turn-off delay time t d(off) 10 20 fall time t f 8 16 tu r n - o n d e l ay t i m e t d(on) v dd = 20 v, r l = 5.7 ? i d ? 3.5 a, v gen = 10 v, r g = 1 ? 714 rise time t r 20 30 turn-off delay time t d(off) 14 21 fall time t f 8 16 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c 1.75 a pulse diode forward current i sm 20 body diode voltage v sd i s = 3.5 a, v gs ?? 0 v 0.8 51.2 v body diode reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/s, t j = 25 c 15 23 ns body diode reverse recovery charge q rr 714nc reverse recovery fall time t a 11 ns reverse recovery rise time t b 4
DTS4500 www.daysemi.jp document number: 67030 s10-2250-rev. a, 04-oct-10 www.daysemi.jp 3 new product typical characteristics (25 c, unless otherwise noted) output characteristics on-resistance vs. drain current and gate voltage gate charge 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 v gs =10vthru4v v gs =3v v ds - drain-to-source voltage (v) i d - drain current (a) 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 v gs =4.5v v gs =10v r ds(on) - on-resistance () i d - drain current (a) 0 2 4 6 8 10 0123456 i d =4.3a v ds =20v v ds =10v v ds =32v q g - total gate charge (nc) v gs - gate-to-source voltage (v) transfer characteristics capacitance on-resistance vs. junction temperature 0 1 2 3 4 5 0.0 0.6 1.2 1.8 2.4 3.0 t c = 125 c t c = 25 c t c = - 55 c v gs - gate-to-source voltage (v) i d - drain current (a) c rss 0 90 180 270 360 450 0 5 10 15 20 c iss c oss v ds - drain-to-source voltage (v) c - capacitance (pf) 0.65 0.85 1.05 1.25 1.45 1.65 - 50 - 25 0 25 50 75 100 125 150 v gs =4.5v;i d =3.9a v gs =10v;i d =4.3a t j - junction temperature (c) (normalized) r ds(on) - on-resistance
DTS4500 www.daysemi.jp www. daysemi.jp 4 document number: 67030 s10-2250-rev. a, 04-oct-10 new product typical characteristics (25 c, unless otherwise noted) source-drain diode forward voltage threshold voltage 0.1 1 10 100 0 0.3 0.6 0.9 1.2 t j = 25 c t j = 150 c v sd - source-to-drain voltage (v) i s - source current (a) 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a v gs(th) (v) t j - temperature (c) on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.02 0.04 0.06 0.08 0.10 246810 t j = 25 c t j = 125 c i d =4.3a r ds(on) - on-resistance () v gs - gate-to-source voltage (v) 0 8 16 24 32 0.001 0.01 0.1 1 10 100 time (s) power (w) safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 1s,10s limited by r ds(on) * bvdss limited 1ms 100 s 10 ms dc 100 ms v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specied i d - drain current (a)
DTS4500 www.daysemi.jp document number: 67030 s10-2250-rev. a, 04-oct-10 www.daysemi.jp 5 new product typical characteristics (25 c, unless otherwise noted) * the power dissipation p d is based on t j(max.) = 150 c, using junction-to-cas e thermal resistance, and is mo re useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. current derating* 0 1.5 3.0 4.5 6.0 0 25 50 75 100 125 150 t c - case temperature (c) i d - drain current (a) power derating, junction-to-foot 0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t c - case temperature (c) power (w) power derating, junction-to-ambient 0 0.3 0.6 0.9 1.2 0 25 50 75 100 125 150 t a - ambient temperature (c) power (w)
DTS4500 www.daysemi.jp th e rm a l ratings (t a = 25 c, un le s s ot he rwi se no ted) no t e n or mal iz ed therm al transie nt impeda nc e, juncti on -to-am bi ent ? the ch ar ac te ris ti cs sh o wn in the two gr aphs - nor malized tra ns i ent th ermal impedance junction- to -ambient ( 25 c) - normalized transi ent thermal impedance junction- to -foot ( 25 c ) are gi ve n for general gui del in es on ly to e nab le the us er to ge t a ba ll park indication of part capabil it ie s. the data are ex tra ct ed from sin gle pu lse tr a ns i ent th ermal im pedan ce charac ter is ti cs wh ich are de ve loped fr om empirical m eas ur em ent s. the la tt er is va lid for the part mounted on printed cir cuit board - fr 4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. the part ca pa b ili t i es can widely vary depending on ac tu al a ppl ic ati on par am ete rs and operati ng co nditio ns. www. daysemi.jp 6 document number: 67030 s10-2250-rev. a, 04-oct-10 . normalized thermal transient im pedance, junction-to-ambient 10 -3 10 -2 1 10 10 000 10 -1 10 -4 100 0.2 0.1 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.01 t 1 t 2 notes: p dm 1. duty cycle, d = 2. per unit base = r thja = 125 c/w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. surface mounted duty cycle = 0.5 single pulse 0.02 0.05 1000 10 -3 10 -2 01 1 10 -1 10 -4 0.2 0.1 duty cycle = 0.5 square wave pulse duration (s) normalized effective transient thermal impedance 1 0.1 0.05 single pulse 0.02
package information document number: 71196 09-jul-01 www. g d \ v h p l m s 1 sot-23 (to-236): 3-lead b e e 1 1 3 2 s e e 1 d a 2 a a 1 c s e a ting pla ne 0.10 mm 0.004" c c l 1 l q g au ge pl a ne s e a ting pla ne 0.25 mm dim millimeters inches min max min max a 0.89 1.12 0.0 35 0.044 a 1 0.01 0.10 0.0004 0.004 a 2 0.88 1.02 0.0346 0.040 b 0. 35 0.50 0.014 0.020 c 0.085 0.18 0.00 3 0.007 d 2.80 3.04 0.110 0.120 e 2.10 2.64 0.08 3 0.104 e 1 1.20 1.40 0.047 0.055 e 0.95 bsc 0.0 374 ref e 1 1.90 bsc 0.0748 ref l 0.40 0.60 0.016 0.024 l 1 0.64 ref 0.025 ref s 0.50 ref 0.020 ref q 3 8 38 ecn: s-0 3 946-rev. k, 09-jul-01 dwg: 5479
application note document number: 72609 www. daysemi.jp revision: 21-jan-08 1 application note recommended minimum pads for sot-23 0.106 (2.692) recommended mi nimum pads dimensions in inches/(mm) 0.022 (0.559) 0.049 (1.245) 0.029 (0.724) 0.037 (0.950) 0.053 (1.341) 0.097 (2.459) return to index return to index
legal disclaimer notice www.daysemi.jp revision: 02-oct-12 1 document number: 72610 disclaimer all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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